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ZNBG3115
ZNBG3116
SYMBOL
PARAMETER
CONDITIONS
MIN.
LIMITS
TYP.
MAX.
UNITS
TONE DETECTION CHARACTERISTICS
V OUT
F inz
AG
FV T
Filter Amplifier
Bias Voltage 5
Input Impedance
Amplifier Gain
V Threshold 5
I fin =0
V FIN =100mV p/p
V FIN =100mV p/p
1.75
100
1.95
150
30
170
2.15
350
V
?
V/mA
mV p/p
Output Stage
V LOV
L OV Volt. Range 6
I L =50mA(L B or H B )
-0.5
V CC -1.8 V
I LOV
V LBL
L OV Bias Current
L B Output Low
V LOV =0
V LOV =0 I L =0
Rlb-Csub=1M ?
Enabled
6
0.02
-3.05
0.15
-2.80
1.0
-2.55
μ A
V
V LOV =3V I L =0mA
Enabled
6
-0.01
0
0.1
V
Rlb-Csub=1M ?
V LBH
L B Output High
V LOV =0 I L =10mA
V LOV =3V I L =50mA
Disabled 6
Disabled 6
-0.025 0
2.9 3.0
0.025
3.1
V
V
V HBL
H B Output Low
V LOV =0 I L =0
Disabled 6
Rhb-Csub=1M ?
V LOV =3V I L =0
Rhb-Gnd=1M ?
Disabled
6
-3.05
-0.01
-2.80
0
-2.55
0.1
V
V
V
V HBH
H B Output High
V LOV =0 I L =10mA
V LOV =3V I L =50mA
Enabled 6
Enabled 6
-0.025 0
2.9 3.0
0.025
3.1
V
V
POLARITY SWITCH CHARACTERISTICS
I POL
Input Current
V POL =25V (Applied via R POL =2k ?)
10
25
40
μ A
V TPOL
T SPOL
Threshold Voltage
Switching Speed
V POL =25V (Applied via R POL =2k ?)
V POL =25V (Applied via R POL =2k ?)
14
14.75 15.5
100
V
ms
NOTES:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C NB and C SUB , of 47nF are required for this
purpose.
2. The characteristics are measured using an external reference resistor R CAL of value 33k wired from pins R CAL to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. C G , 4.7nF, are connected between gate outputs and
ground, C D , 10nF, are connected between drain outputs and ground.
5 . These parameters are linearly related to V CC
6. These parameters are measured using Test Circuit 1
4
ISSUE 2 - JUNE 200 6
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